Localized doping
نویسندگان
چکیده
منابع مشابه
Suppressing leakage by localized doping in Si nanotransistor channels.
By first principles atomistic analysis we demonstrate how controlled localized doping distributions in nanoscale Si transistors can suppress leakage currents. We consider dopants (B and P atoms) to be randomly confined to a ≈1 nm width doping region in the channel. If this region is located away from the electrodes, roughly 20% of the channel length L, the tunneling leakage is reduced 2× compa...
متن کاملLocalized nano-solid-solution induced by Cu doping in ZnS for efficient solar hydrogen generation.
Nanosized photocatalysts have been shown to be important to many modern photocatalytic reactions. Control of the microstructure of the nanocrystals enables regulation of their optical properties and enhancement of specific reactions. Here, Cu(2+)-doped ZnS nanosphere photocatalysts with hierarchical nanostructures and controllable sizes were synthesized via a facile wet-chemical reaction. We de...
متن کاملDoping in competition or doping in sport?
INTRODUCTION Since ancient times, competitive athletes have been familiar with the use of ergogenic aids and they will probably continue to use unfair and harmful substances in future, because their inclination to victory, along with the mirage of glory and money, will probably overcome health and legal risks. SOURCES OF DATA We searched PubMed using the term doping over the period 1990 to th...
متن کاملDoping droops.
Drug abuse is a major concern in the athletic world. The misconception among athletes and their coaches is that when an athlete breaks a record it is due to some "magic ingredient" and not because of training, hard work, mental attitude and championship performance. The personal motivation to win in competitive sports has been intensified by national, political, professional and economic incent...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nature Materials
سال: 2013
ISSN: 1476-1122,1476-4660
DOI: 10.1038/nmat3641